发明名称 |
Power Transistor and Method for Controlling a Power Transistor |
摘要 |
Embodiments of the invention are related to a power transistor and a method for controlling a power transistor. In one embodiment a power transistor comprises a power semiconductor body with a plurality of power transistor cells each having a control electrode and a current path. The power transistor furthermore comprises a temperature sensor formed by at least one transistor cell in the power semiconductor body whose control electrode is coupled to one electrode of the current path forming a reversed biased pn-junction.
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申请公布号 |
US2010079190(A1) |
申请公布日期 |
2010.04.01 |
申请号 |
US20080238531 |
申请日期 |
2008.09.26 |
申请人 |
CORTIGIANI FABRIZIO;MIGNOLI FRANCO;RAGONESI GIANLUCA;SOLDA SILVIA |
发明人 |
CORTIGIANI FABRIZIO;MIGNOLI FRANCO;RAGONESI GIANLUCA;SOLDA SILVIA |
分类号 |
H03K17/14 |
主分类号 |
H03K17/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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