| 摘要 |
#CMT# #/CMT# The method involves bonding a donor substrate and a receiver substrate by a thermal treatment. Plasma activation of a surface having an oxide layer, of the donor substrate is carried out under an atmosphere containing oxygen, where the donor substrate is provided for a transfer of Smart Cut(RTM: silicon-on insulator (SOI) type substrate structure manufacturing process), of the layer to the receiver substrate to obtain a SOI type structure. The plasma activation of a surface of the receiver substrate is carried out an inert atmosphere having an inert gas e.g. argon or nitrogen. #CMT#USE : #/CMT# Method for bonding two substrates for manufacturing a silicon-on insulator type substrate structure (claimed). #CMT#ADVANTAGE : #/CMT# The method improves bonding the substrates, reduces number of defects presented on the substrates, and increases obtained bonding energy after plasma activation. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a graph illustrating a comparison of number of defects counted after detachment in the field of transfer of a layer issued from a donor substrate boned with a receiver substrate for an oxide layer of 250 Armstrong.'(Drawing includes non-English language text)' #CMT#INORGANIC CHEMISTRY : #/CMT# The receiver substrate is made of silicon. |
