发明名称 Method for forming three-dimensional structure, method for manufacturing semiconductor device, and semiconductor device
摘要 A method for forming a three-dimensional structure comprises: a first step of dropping a liquid material containing a structure-forming material and a solvent onto a structure forming surface; and a second step of drying at least a part of the solvent in the dropped liquid material to form a deposit layer on the structure forming surface, wherein the first step and the second step are repeated while a dropping position of the liquid material is shifted such that a next droplet of the liquid material is dropped onto the deposit layer formed of the previously-dropped liquid material to repeatedly accumulate the deposit layers on the structure forming surface, thereby forming a three-dimensional structure having at least one inclination portion inclined with respect to the structure forming surface.
申请公布号 US2010078824(A1) 申请公布日期 2010.04.01
申请号 US20090585875 申请日期 2009.09.28
申请人 FUJIFILM CORPORATION 发明人 OKAMORI KAZUAKI
分类号 H01L21/768;H01L21/50;H01L23/482 主分类号 H01L21/768
代理机构 代理人
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