| 摘要 |
A high-voltage metal oxide semiconductor device comprising a main body of a first conductivity type, a conductive structure, a first well of a second conductivity type, a source region of the first conductivity type, and a second well of the second conductivity type is provided. The conductive structure has a first portion and a second portion. The first portion is extended from an upper surface of the main body into the main body. The second portion is extended along the upper surface of the main body. The first well is located in the main body and below the second portion. The first well is kept away from the first portion with a predetermined distance. The source region is located in the first well. The second well is located in the main body and extends from a bottom of the first portion to a place close to a drain region.
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