| 摘要 |
PURPOSE: It advances the isotropic etching and argon sputtering in the spacer etch and the semiconductor device manufacturing method forms the top of the gate pattern into the round shape. It can prevent from the impurity within the inter-layer insulating film being infiltrated to substrate. CONSTITUTION: A plurality of gate patterns(12) is formed on the substrate(11). A first insulating layer is formed according to the level difference of the overall structure including the gate pattern. The first insulating layer is the isotropic etching and the spacer(14A) is formed in the sidewall of the gate pattern. The argon sputtering is advanced in outcome. The second insulating layer is formed according to the level difference of the overall structure including spacer.
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