发明名称 |
TRANSISTOR DEVICE COMPRISING AN ASYMMETRIC EMBEDDED SEMICONDUCTOR ALLOY |
摘要 |
Transistor characteristics may be adjusted on the basis of asymmetrically formed cavities in the drain and source areas so as to maintain a strain-inducing mechanism while at the same time providing the possibility of obtaining asymmetric configuration of the drain and source areas while avoiding highly complex implantation processes. For this purpose, the removal rate during a corresponding cavity etch process may be asymmetrically modified on the basis of a tilted ion implantation process.
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申请公布号 |
US2010081244(A1) |
申请公布日期 |
2010.04.01 |
申请号 |
US20090555879 |
申请日期 |
2009.09.09 |
申请人 |
PAPAGEORGIOU VASSILIOS;HOENTSCHEL JAN;MULFINGER ROBERT;SCOTT CASEY |
发明人 |
PAPAGEORGIOU VASSILIOS;HOENTSCHEL JAN;MULFINGER ROBERT;SCOTT CASEY |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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