| 摘要 |
A semiconductor device, an image sensor, and methods of manufacturing the same. A semiconductor device may include metal interconnections formed over a lower substrate, a hard mask formed over metal interconnections, and/or an insulating layer formed over a surface of a lower substrate. A semiconductor device may include an insulating layer including an air gap formed between metal interconnections. An image sensor may include a pixel array area having photodiodes and transistors, and/or a logic area having a plurality of transistors, which may be formed over a semiconductor substrate. An image sensor may include a metal interconnection and/or an insulating layer structure connected to transistors, and may cover a pixel array area and/or a logic area. An image sensor may include a color filter layer formed over a pixel array area, and an insulating layer structure of a pixel array area having an air gap between metal interconnections.
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