| 摘要 |
In an insulating film pattern, a first pattern part is formed at one surface of the insulating film pattern to form a source electrode, a drain electrode, and a semiconductor layer of the thin film transistor. The first pattern part is recessed in one surface of the insulating film pattern. The insulating film pattern is formed on a substrate through an imprint scheme, and is deposited on a base substrate having a gate electrode and a gate line through a contact print scheme. A source electrode, drain electrode, and semiconductor layer of a thin film transistor are formed through an inkjet print scheme using a first pattern part of the insulating film pattern. A gate electrode and gate line may be formed using a second pattern part of the insulating film pattern
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