| 摘要 |
Disclosed are an image sensor and a method for manufacturing the same. The image sensor can include a readout circuitry formed on a first substrate; an interlayer dielectric layer including at least one metal and contact plug electrically connected to the readout circuitry; and an image sensing device formed on a second substrate, bonded to the interlayer dielectric layer, and provided with a first conductive type conduction layer and a second conductive type conduction layer. The image sensor further includes a plurality of uppermost contact plugs arranged in a three-dimensional matrix configuration at an uppermost metal area, each uppermost contact plug extending from an uppermost metal of the at least one metal to an inner portion of the first conductive type conduction layer.
|
