| 摘要 |
<p>Disclosed is a thin-film transistor. One embodiment of the thin-film transistor comprises a drain electrode film and a source electrode film. The drain electrode film and the source electrode film each comprise a composite copper alloy film comprising a copper alloy substrate layer that includes an oxygen-calcium enriched layer and is provided in contact with a barrier film, and a Cu layer provided on the copper alloy substrate layer. The oxygen-calcium enriched layer included in the copper alloy substrate layer comprises 2 to 30% by mole of Ca and 20 to 50% by mole of oxygen with the balance consisting of Cu and unavoidable impurities. Another embodiment of the thin-film transistor comprises a drain electrode film and a source electrode film. The drain electrode film and the source electrode film each comprise a composite copper alloy film comprising a copper alloy substrate layer that includes an oxygen-Ca(Al,Sn,Sb) enriched layer and is provided in contact with a barrier film, and a Cu alloy layer provided on the copper alloy substrate layer. The oxygen-Ca(Al,Sn,Sb) enriched layer included in the copper alloy substrate layer comprises 2 to 30% by mole of Ca, 1 to 10% by mole in total of one or more elements selected from Al, Sn, and Sb, and 20 to 50% by mole of oxygen with the balance consisting of Cu and unavoidable impurities.</p> |
