| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
<p>A through electrode (16) is formed in a first substrate (11) so as to reach the rear surface thereof. A second substrate (21) is bonded to the rear surface of the first substrate (11). The second substrate (21) is electrically connected to the first substrate (11) via the through electrode (16). The side wall of the end portion of the through electrode (16) in contact with the second substrate (21) has an inclination angle greater than an inclination angle of the side wall of the other portion.</p> |
| 申请公布号 |
WO2010035375(A1) |
申请公布日期 |
2010.04.01 |
| 申请号 |
WO2009JP03164 |
申请日期 |
2009.07.07 |
| 申请人 |
PANASONIC CORPORATION;AOI, NOBUO |
发明人 |
AOI, NOBUO |
| 分类号 |
H01L21/3205;H01L23/52;H01L25/065;H01L25/07;H01L25/18 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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