GRAPHENE MEMORY CELL AND FABRICATION METHODS THEREOF

摘要

The disclosed memory cell (10) comprises a graphene layer (16) having controllable resistance states representing data values of the memory cell (10) In one exemplary embodiment a non- volatile memory is provided by having a ferroelectric layer (18) control the resistance states. In the exemplary embodiment, binary '0's and ' 1 's are respectively represented by low and high resistance states of the graphene layer (16), and these states are switched in a non-volatile manner by the polarization directions of the ferroelectric layer (18).