发明名称 |
PHOTOMASK AND METHOD OF FABRICATING A PHOTOMASK |
摘要 |
A method of fabricating a photomask is provided. A masking layer (e.g., chrome) is deposited on a substrate. A plasma treatment may be performed on the chrome layer. A photoresist layer may be formed on the treated chrome layer. In an embodiment, the plasma treatment roughens the chrome layer. In an embodiment, the plasma treatment forms a barrier film on the chrome layer. The photoresist layer may be used to pattern a sub-resolution assist feature.
|
申请公布号 |
US2010081065(A1) |
申请公布日期 |
2010.04.01 |
申请号 |
US20080243311 |
申请日期 |
2008.10.01 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHENG DONG-HSU;HUANG CHEIN-HAO;LIN CHENG-MING |
分类号 |
G03F1/00 |
主分类号 |
G03F1/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|