发明名称 PHOTOMASK AND METHOD OF FABRICATING A PHOTOMASK
摘要 A method of fabricating a photomask is provided. A masking layer (e.g., chrome) is deposited on a substrate. A plasma treatment may be performed on the chrome layer. A photoresist layer may be formed on the treated chrome layer. In an embodiment, the plasma treatment roughens the chrome layer. In an embodiment, the plasma treatment forms a barrier film on the chrome layer. The photoresist layer may be used to pattern a sub-resolution assist feature.
申请公布号 US2010081065(A1) 申请公布日期 2010.04.01
申请号 US20080243311 申请日期 2008.10.01
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHENG DONG-HSU;HUANG CHEIN-HAO;LIN CHENG-MING
分类号 G03F1/00 主分类号 G03F1/00
代理机构 代理人
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