| 摘要 |
At least one embodiment of the radiation emitting device(1) comprises at least two optoelectronic semiconductor chips (2), the semiconductor chips (2) being arranged one over the other in a stack (3). A main beam of the device (1) is produced laterally relative to a longitudinal axis (A) of the stack (3). A distance (D) between two adjacent semiconductor chips (2) in the direction of the longitudinal axis (A) is at least 1 mm. |
