MIIM DIODES HAVING STACKED STRUCTURE

摘要

A metal-insulator diode is disclosed. In one aspect, the metal-insulator diode comprises first and second electrode and first and second insulators arranged as follows. An insulating region has a trench formed therein. The trench has a bottom and side walls. The first electrode, which comprises a first metal, is on the side walls and over the bottom of the trench. A first insulator has a first interface with the first electrode. At least a portion of the first insulator is within the trench. A second insulator has a second interface with the first insulator. At least a portion of the second insulator is within the trench. The second electrode, which comprises a second metal, is in contact with the second insulator. The second electrode at least partially fills the trench. A memory element can further be in contact with one of the electrodes, preferably also within the trench.