| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve a cycling property by sufficiently maintaining boron density on the edge of an active area. CONSTITUTION: A tunnel insulation layer(101), a conductive layer(102) for a floating gate, and a hard mask layer are successively formed on a semiconductor substrate(100). A device isolation trench(107) is formed by etching the hard mask layer, the conductive layer for the floating gate, the tunnel insulation layer and the semiconductor substrate. The device isolation layer is formed by filling the device isolation trench with an insulation layer(108,109). The upper sidewall of the device isolation trench is exposed by etching the upper side of the device isolation layer. An ion injection region is formed on the upper sidewall of the device isolation trench.
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