| 摘要 |
<p>Methods of forming different back-end-of-line (BEOL) wiring for different circuits on the same semiconductor product, i.e., wafer or chip, are disclosed. In one embodiment, the method includes simultaneously generating BEOL wiring over a first circuit using a dual damascene structure in a first dielectric layer, and BEOL wiring over a second circuit using a single damascene via structure in the first dielectric layer. Then, simultaneously generating BEOL wiring over the first circuit using a dual damascene structure in a second dielectric layer, and BEOL wiring over the second circuit using a single damascene line wire structure in the second dielectric layer. The single damascene via structure has a width approximately twice that of a via portion of the dual damascene structures and the single damascene line wire structure has a width approximately twice that of a line wire portion of the dual damascene structures. A semiconductor product having different width BEOL wiring for different circuits is also disclosed.</p> |
