| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoresist stripping liquid excellent in stripping property of a photoresist film without corroding Al metals (Al and Al alloys), Mo or other metals in relation to photolithography techniques to be used for formation of recent microfabricated or multilayered semiconductors and liquid crystal display elements. SOLUTION: The photoresist stripping liquid contains: (a) 0.5 to 50 mass% of N,N-diethylhydroxylamine; (b) 2 to 30 mass% of alkanolamine (such as monoisopropanolamine, monoethanolamine and N-methylethanolamine): and (c) 40 to 95 mass% of a water-soluble organic solvent (except for the above component (a), and for example, N-methyl-2-pyrrolidone, diethyleneglycol monobutylether, and dimethylsulfoxide). COPYRIGHT: (C)2006,JPO&NCIPI |
