SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING STRAIN-COMPENSATED HYBRID QUANTUM WELL STRUCTURE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A semiconductor light emitting device having a strain-compensated hybrid quantum well structure are provided to control a strain of a well and the wall at an active region by using the ZnO substrate. CONSTITUTION: An n-type nitride semiconductor layer(120) is formed on a ZnO series substrate(100). An active layer(130) is formed in the fixed region on the n-type nitride semiconductor layer. The active layer has a strain compensating hybrid quantum well structure. The strain compensating hybrid quantum well structure is comprised of the deposited inGaN quantum-well layer and InGaN barrier which are deposited alternately. The InGaN quantum-well layer has at least compress strain and the InGaN barrier has a tensile strain.