| 摘要 |
In an integrated type thin film solar cell, a transparent electrode layer (12), a semiconductor layer (20) including a photoelectric conversion unit 1 or more, and a back face electrode layer (4) sequentially deposited on a transparent insulating substrate (11) are each divided by a plurality of transparent electrode layer separation grooves(903), semiconductor layer separation grooves (905), and back face electrode layer separation groove (9040), which are linear and parallel to each other, so as to form a plurality of photoelectric conversion cells, and a plurality of the photoelectric conversion cells are electrically connected to each other in series through the semiconductor layer separation grooves. The transparent electrode layer is formed out of a transparent conductive material which can be formed to a layer at a low temperature, at least a part of the transparent electrode layer separation grooves, the semiconductor layer separation grooves and the back face electrode layer separation grooves ard composed of a range of pits in substantially the same shape formed at a predetermined pitch, and a maximum length W in a width direction of the grooves in each of the pits is larger than a maximum length L in a longer direction of the grooves. |
