摘要 |
A hybrid circuit structure (110) that includes a metal substrate (112), an inorganic electrical insulator layer (120) and at least one inorganic thick-film passive circuit element (114,116,118), such as a thick-film resistor (116), capacitor (118) or conductor (114). An interface layer (122) is provided between the insulator layer (120) and the circuit element (114,116,118) to prevent the detrimental effects of interlayer diffusion. The composition of the interface layer (122) is selected to prevent the diffusion of constituents from the inorganic insulator layer (426), and to have a CTE near that of the circuit element (114,116,118) to reduce thermal fatigue. As a result, the passive circuit element (114,116,118) can be formed of essentially any one of a number of conventional inorganic thick-film materials that are widely used on alumina substrates. |
申请人 |
CASANTRA ACQUISITION III LLC |
发明人 |
ELLIS, MARION EDMUND;LAUTZENHISER, FRANS PETER;STANKAVICH, ANTHONY JOHN;SARMA, DWADASI HARE RAMA;BOWLES, PHILIP HARBAUGH;MOBLEY, WASHINGTON MORRIS |