| 摘要 |
<p>PURPOSE: A semiconductor device, a manufacturing method thereof, and a data process system are provided to perform a hot oxidation process on an SOD(Spin On Dielectrics) film material without affecting a lower layer using a stack structure comprised of a first liner layer and a second liner layer. CONSTITUTION: A semiconductor device includes a concave part, a first liner layer(4), a second liner layer, and an insulation area. The first liner layer is formed on the lower side and the inner sides facing the concave part. The second liner layer is formed on the first liner layer and contains the oxygen atom. The insulation area includes an SOD layer(6) filled in the concavo part.</p> |
