RECESSED CHANNEL ARRAY TRANSISTOR AND METHOD OF FORMING THE SAME, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE

摘要

PURPOSE: A recess channel transistor, a method for forming the same, a semiconductor device including the same, and a manufacturing method thereof are provided to reduce a lump failure due to the concentration of an electric field by rounding a recess channel transistor. CONSTITUTION: A recess channel transistor includes a substrate, a gate oxidation layer(158), a gate electrode(162a), a source/drain. The substrate is divided into an active region(150a) and a device isolation region. The active region includes a recess part. The gate oxidation layer is formed on the inner wall of the recess part and the upper side of the substrate. The thickness of the layer in contact with the sidewalls of the recess unit and the active region is 70% thicker than the layer of the layer on the sidewall of the recess unit. The gate electrode is formed on the gate oxidation layer and is positioned inside the recess part. The source/drain is formed under the substrate on both sides of the gate electrode.