| 摘要 |
The invention relates to the semiconducting materials possessing semiconductor properties, particularly to a semiconducting material of doped tin telluride.The material, according to the invention, is made on base of tin telluride, tellurium and is additionally doped with gallium, and the components are taken in the following ratio, mass %:tin telluride�94.5...98.3,gallium��1.1...3.5,tellurium��0.6...2.1.
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