发明名称 |
Image sensor and fabrication method thereof |
摘要 |
An image sensor includes a substrate having an active pixel sensor region defined therein, a plurality of first conductivity type photodiodes formed in the active pixel sensor region and a first conductivity-type first deep well formed in the active pixel sensor region in a location which does not include the plurality of the first conductivity-type photodiodes. Moreover, the first deep well is electrically connected to a positive voltage.
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申请公布号 |
US7687837(B2) |
申请公布日期 |
2010.03.30 |
申请号 |
US20060542340 |
申请日期 |
2006.10.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK YOUNG-HOON;SONG JAE-HO;PARK WON-JE;PARK JIN-HYEONG;BAE JEONG-HOON;PARK JUNG-HO |
分类号 |
H01L31/113 |
主分类号 |
H01L31/113 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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