发明名称 Image sensor and fabrication method thereof
摘要 An image sensor includes a substrate having an active pixel sensor region defined therein, a plurality of first conductivity type photodiodes formed in the active pixel sensor region and a first conductivity-type first deep well formed in the active pixel sensor region in a location which does not include the plurality of the first conductivity-type photodiodes. Moreover, the first deep well is electrically connected to a positive voltage.
申请公布号 US7687837(B2) 申请公布日期 2010.03.30
申请号 US20060542340 申请日期 2006.10.03
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK YOUNG-HOON;SONG JAE-HO;PARK WON-JE;PARK JIN-HYEONG;BAE JEONG-HOON;PARK JUNG-HO
分类号 H01L31/113 主分类号 H01L31/113
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