发明名称 |
Magnetic memory cell and magnetic memory device |
摘要 |
The present invention aims to reduce heat fluctuations of a memory cell and thereby provide a stable writing operation when a magnetization reversal process not involving a reversal magnetic field is used for writing into the memory cell. The magnetic memory cell has a structure where first and second magnetization pinned terminals are connected, with a space therebetween, to one surface of a non-magnetic region, and a magnetization free terminal is connected to the other surface. Magnetization directions of the first and second magnetization pinned terminals are anti-parallel to each other. Writing is performed by controlling a polarity of a current flowing between the first and second magnetization pinned terminals through the non-magnetic region and thus reversing magnetization of the magnetization free terminal. Reading is performed by detecting a magnetic resistance attributable to a change in relative magnetization direction between the first magnetization pinned terminal and the magnetization free terminal.
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申请公布号 |
US7688623(B2) |
申请公布日期 |
2010.03.30 |
申请号 |
US20080970550 |
申请日期 |
2008.01.08 |
申请人 |
HITACHI, LTD.;TOHOKU UNIVERSITY |
发明人 |
MAEKAWA SADAMICHI;TAKAHASHI SABURO;IMAMURA HIROSHI;ICHIMURA MASAHIKO;TAKAHASHI HIROMASA |
分类号 |
G11C11/14 |
主分类号 |
G11C11/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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