| 摘要 |
A dielectric layer containing an atomic layer deposited titanium silicon oxide film disposed in an integrated circuit and a method of fabricating such a dielectric layer provide a dielectric layer for use in a variety of electronic devices. Embodiments include forming titanium silicates and/or mixtures of titanium oxide and silicon oxides as dielectric layers in devices in an integrated circuit. In an embodiment, a titanium silicon oxide film is formed by depositing titanium oxide by atomic layer deposition and silicon oxide by atomic layer deposition onto a substrate surface. Embodiments include structures for capacitors, transistors, memory devices, and electronic systems with dielectric layers containing an atomic layer deposited titanium silicon oxide film, and methods for forming such structures.
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