发明名称 Semiconductor light emitting device
摘要 There is provided a semiconductor light emitting device having excellent light extraction efficiency to efficiently reflect light moving into the device by increasing the total reflectivity of a reflective layer. A semiconductor light emitting device according to an aspect of the invention includes: a substrate, a reflective electrode, a first conductivity semiconductor layer, an active layer, and a second conductivity type semiconductor layer that are sequentially stacked. Here, the reflective electrode includes; a first reflective layer provided on the substrate and including a conductive reflective material reflecting light generated from the active layer; and a second reflective layer provided on the first reflective layer, including one or more dielectric portions reflecting light generated from the active layer, and one or more contact holes filled with a conductive filler to electrically connect the first conductivity type semiconductor layer and the first reflective layer, and having a greater thickness than a wavelength of the generated light.
申请公布号 US7687818(B2) 申请公布日期 2010.03.30
申请号 US20080177517 申请日期 2008.07.22
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 YOON SANG HO;LEE SU YEOL;BAIK DOO GO;CHOI SEOK BEOM;JANG TAE SUNG;WOO JONG GUN
分类号 H01L33/00;H01L33/10;H01L33/28;H01L33/30;H01L33/34;H01L33/38 主分类号 H01L33/00
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