发明名称 Semiconductor memory capable of testing a failure before programming a fuse circuit and method thereof
摘要 Each program circuit outputs an operating specification signal indicating a first or second operating specification according to a program state. Each specification changing circuit is set by a corresponding block selection signal and outputs an operating specification signal indicating a second operating specification. Each timing control circuit changes an output timing of a precharge control signal for a bit line according to the operating specification signal. By the operating specification signal from the specification changing circuit, a failure can be detected in each memory block before programming a program circuit. Thereafter, the failure can be relieved by the program circuit. The output timing of the precharge control signal can be set for each memory block by a block selection signal without wiring a dedicated signal line for setting each specification changing circuit. Accordingly, increase in chip size can be minimized.
申请公布号 US7688659(B2) 申请公布日期 2010.03.30
申请号 US20080127161 申请日期 2008.05.27
申请人 FUJITSU MICROELECTRONICS LIMITED 发明人 MORI KAORU;OHNO JUN;KOBAYASHI HIROYUKI
分类号 G11C29/00 主分类号 G11C29/00
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