发明名称 |
Profile adjustment in plasma ion implanter |
摘要 |
A method to provide a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that surface peak dopant profiles and retrograde dopant profiles are realized. The method may include an amorphization step in one embodiment.
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申请公布号 |
US7687787(B2) |
申请公布日期 |
2010.03.30 |
申请号 |
US20080267193 |
申请日期 |
2008.11.07 |
申请人 |
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发明人 |
GODET LUDOVIC;PAPASOULIOTIS GEORGE D.;FANG ZIWEI;APPEL RICHARD;DENO VINCENT;SINGH VIKRAM;PERSING HAROLD M. |
分类号 |
H01J37/317;H01L21/265;H05H1/24 |
主分类号 |
H01J37/317 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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