发明名称 |
Method of manufacturing vertical gallium nitride-based light emitting diode |
摘要 |
A method of manufacturing a vertical GaN-based LED comprises preparing an n-type GaN substrate; sequentially forming an active layer and a p-type nitride semiconductor layer on the n-type GaN substrate through an epitaxial growth method; forming a p-electrode on the p-type nitride semiconductor layer; wet-etching the lower surface of the n-type GaN substrate so as to reduce the thickness of the n-type GaN substrate; forming a flat n-type bonding pad on the wet-etched lower surface of the n-type GaN substrate, the n-type bonding pad defining an n-electrode formation region; and forming an n-electrode on the n-type bonding pad.
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申请公布号 |
US7687376(B2) |
申请公布日期 |
2010.03.30 |
申请号 |
US20070697537 |
申请日期 |
2007.04.06 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
CHOI PUN JAE;LEE JONG HO |
分类号 |
H01L21/20;H01L33/22;H01L33/32;H01L33/36 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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地址 |
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