发明名称 |
Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor |
摘要 |
The formation of contact holes and a capacitor is performed in a semiconductor integrated circuit such as an active matrix circuit. An interlayer insulator having a multilayer (a lower layer is silicon oxide; an upper layer is silicon nitride) each having different dry etching characteristic is formed. Using a first mask, the silicon nitride corresponding to the upper layer in the interlayer insulator is etched by dry etching. This etching is completed by using the silicon oxide corresponding to the lower layer as an etching stopper. A pattern is formed using a second mask to form selectively the silicon oxide corresponding to the lower layer. Thus a first portion that the silicon oxide and the silicon nitride are etched and a second portion that only silicon nitride is etched are obtained. The first portion is used as a contact hole. A capacitor is formed in the second portion.
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申请公布号 |
US7687809(B2) |
申请公布日期 |
2010.03.30 |
申请号 |
US20080149485 |
申请日期 |
2008.05.02 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD |
发明人 |
ZHANG HONGYONG |
分类号 |
H01L23/522;H01L29/417;G02F1/1362;H01L21/28;H01L21/336;H01L21/768;H01L21/77;H01L21/84;H01L27/12;H01L27/13;H01L29/786 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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