发明名称 |
Semiconductor device and method for manufacturing same |
摘要 |
The present invention provides a semiconductor device comprising a metal interconnect having considerably improved electromigration resistance and/or stress migration resistance. The copper interconnect 107 comprises a silicon-lower concentration region 104 and a silicon solid solution layer 106 disposed thereon. The silicon solid solution layer 106 has a structure, in which silicon atoms are introduced within the crystal lattice structure that constitutes the copper interconnect 107 to be disposed within the lattice as inter-lattice point atoms or substituted atoms. The silicon solid solution layer 106 has the structure, in which the crystal lattice structure of copper (face centered cubic lattice; lattice constant is 3.6 angstrom) remains, while silicon atoms are introduced as inter-lattice point atoms or substituted atoms.
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申请公布号 |
US7687918(B2) |
申请公布日期 |
2010.03.30 |
申请号 |
US20030740813 |
申请日期 |
2003.12.22 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
KUNIMUNE YORINOBU;HASEGAWA MIEKO;ITOU TAKAMASA;TAKEDA TAKESHI;AOKI HIDEMITSU |
分类号 |
H01L21/3205;H01L23/48;H01L21/768;H01L23/52;H01L23/532 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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