发明名称 |
Semiconductor device manufacturing method |
摘要 |
A semiconductor device manufacturing method is disclosed. The method is to form a second semiconductor layer which has less susceptibility to adopting insulative characteristics than a first semiconductor layer on the first semiconductor layer. Then, grooves which expose portions of the second and first semiconductor layers are formed to extend from the upper surface of the second semiconductor layer into the first semiconductor layer. Next, portions of the first and second semiconductor layers which are exposed to the grooves are changed into an insulator form to fill the grooves with the insulator-form portions of the first semiconductor layer.
|
申请公布号 |
US7687368(B2) |
申请公布日期 |
2010.03.30 |
申请号 |
US20050088885 |
申请日期 |
2005.03.25 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KAWASAKI HIROHISA;ISHIMARU KAZUNARI;KASAI KUNIHIRO;OKAYAMA YASUNORI |
分类号 |
H01L21/76;H01L21/762;H01L21/8238 |
主分类号 |
H01L21/76 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|