| 发明名称 |
Metal / metal nitride barrier layer for semiconductor device applications |
| 摘要 |
A metal/metal nitride barrier layer for semiconductor device applications. The barrier layer is particularly useful in contact vias where high conductivity of the via is important, and a lower resistivity barrier layer provides improved overall via conductivity.
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| 申请公布号 |
US7687909(B2) |
申请公布日期 |
2010.03.30 |
| 申请号 |
US20070809153 |
申请日期 |
2007.05.30 |
| 申请人 |
|
发明人 |
DING PEIJUN;XU ZHENG;ZHANG HONG;TANG XIANMIN;GOPALRAJA PRABURAM;RENGARAJAN SURAJ;FORSTER JOHN C.;FU JIANMING;CHIANG TONY;YAO GONGDA;CHEN FUSEN E.;CHIN BARRY L.;KOHARA GENE Y. |
| 分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
| 代理机构 |
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代理人 |
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