| 摘要 |
Provided are a SONGS type nonvolatile or flash memory device and related programming/erasing methods. The device has a deep well region of a first conductive type that isolates a well region of a second conductive type from a substrate to enhance programming and erasing operation characteristics. In the erasing method, first electrons are erased by one of Hot Hole Injection (e.g., gate-to-drain Hot Hole Injection) or tunneling in a first step, and second electrons that are not erased in the first step are erased by the other of tunneling (e.g., gate-to-body tunneling) or HHI in a second step. Preferably, a time gap intervenes between the first and second steps.
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