发明名称 Method for manufacturing display device
摘要 In a method for manufacturing a display device having a light emitting element, a first base insulating film, a second base insulating film, a semiconductor layer, and a gate insulating film are formed in this order over a substrate. A gate electrode is formed over the gate insulating film to overlap with at least a part of the semiconductor layer, and a portion to be a pixel portion of the gate insulating film and the second base insulating film is doped with at least one conductive type impurities. An opening portion is formed by selectively etching the gate insulating film and second base insulating film that are each doped with impurities. The first base insulating film is exposed in a bottom face of the opening portion. Subsequently, an insulating film is formed to cover the opening portion, the gate insulating film, and the gate electrode, and a light emitting element is formed over the insulating film to overlap with at least a part of the opening portion.
申请公布号 US7687404(B2) 申请公布日期 2010.03.30
申请号 US20050121073 申请日期 2005.05.04
申请人 发明人 YAMAZAKI SHUNPEI;OHNUMA HIDETO;OSAME MITSUAKI;ANZAI AYA;GODO HIROMICHI;FUTAMURA TOMOYA
分类号 H01L21/302;H01J1/62;H01J63/04;H01L21/00;H01L21/77;H01L27/32;H01L51/52;H05B33/10 主分类号 H01L21/302
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