发明名称 |
Nitride-based white light emitting device and manufacturing method thereof |
摘要 |
A light emitting device includes an n-type cladding layer. a p-type cladding layer. an active layer interposed between the n-type cladding layer and the p-type cladding layer and an ohmic contact layer contacting the p-type cladding layer or the n-type cladding layer. The ohmic contact layer includes a first film that includes a transparent conductive zinc oxide doped with a rare earth metal and including a one-dimensional nano structure. The one-dimensional nano structure is one of a nano-column, a nano rod and a nano wire.
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申请公布号 |
US7687820(B2) |
申请公布日期 |
2010.03.30 |
申请号 |
US20060503291 |
申请日期 |
2006.08.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SONG JUNE O |
分类号 |
H01L33/00;H01L33/32;H01L33/42;H01L33/50 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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