发明名称 Nitride-based white light emitting device and manufacturing method thereof
摘要 A light emitting device includes an n-type cladding layer. a p-type cladding layer. an active layer interposed between the n-type cladding layer and the p-type cladding layer and an ohmic contact layer contacting the p-type cladding layer or the n-type cladding layer. The ohmic contact layer includes a first film that includes a transparent conductive zinc oxide doped with a rare earth metal and including a one-dimensional nano structure. The one-dimensional nano structure is one of a nano-column, a nano rod and a nano wire.
申请公布号 US7687820(B2) 申请公布日期 2010.03.30
申请号 US20060503291 申请日期 2006.08.11
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SONG JUNE O
分类号 H01L33/00;H01L33/32;H01L33/42;H01L33/50 主分类号 H01L33/00
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