发明名称 |
Method of making group III nitride-based compound semiconductor |
摘要 |
A method of making a group III nitride-based compound semiconductor has the steps of: providing a semiconductor substrate with a polished surface, the semiconductor substrate being of group III nitride-based compound semiconductor; and growing a semiconductor epitaxial growth layer of group III nitride-based compound semiconductor on the semiconductor substrate. The polished surface is an inclined surface that has an off-angle &thetas; of 0.15 degrees or more and 0.6 degrees or less to a-face, c-face or m-face of the semiconductor substrate.
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申请公布号 |
US7687382(B2) |
申请公布日期 |
2010.03.30 |
申请号 |
US20040902482 |
申请日期 |
2004.07.30 |
申请人 |
TOYODA GOSEI CO., LTD.;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
NAKAMURA RYO |
分类号 |
C30B25/20;C30B25/02;C30B25/18;C30B29/40;H01L21/00;H01L21/20;H01L21/205;H01S5/323 |
主分类号 |
C30B25/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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