| 发明名称 |
Single damascene structure semiconductor device having silicon-diffused metal wiring layer |
| 摘要 |
In a semiconductor device, an insulating interlayer having a groove is formed on an insulating underlayer. A silicon-diffused metal layer including no metal silicide is buried in the groove. A metal diffusion barrier layer is formed on the silicon-diffused metal layer and the insulating interlayer.
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| 申请公布号 |
US7687917(B2) |
申请公布日期 |
2010.03.30 |
| 申请号 |
US20030650193 |
申请日期 |
2003.08.28 |
| 申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
OHTO KOICHI;TAKEWAKI TOSHIYUKI;USAMI TATSUYA;YAMANISHI NOBUYUKI |
| 分类号 |
H01L21/768;H01L23/48;H01L21/312;H01L21/3213;H01L23/532 |
主分类号 |
H01L21/768 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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