发明名称 |
Resistive memory device having array of probes and method of manufacturing the resistive memory device |
摘要 |
Provided are a resistive memory device having a probe array and a method of manufacturing the same. The resistive memory device includes a memory part having a bottom electrode and a ferroelectric layer sequentially formed on a first substrate; a probe part having an array of resistive probes arranged on a second substrate, with the tips of the resistive probes facing the ferroelectric layer so as to write and read data on the ferroelectric layer; and a binding layer which grabs and fixes the resistive probes on or above the ferroelectric layer. The method of manufacturing the resistive memory device includes forming a bottom electrode and a ferroelectric layer sequentially on a first substrate; forming an array of resistive probes on a second substrate; and wafer level bonding the first substrate to the second substrate using a binding layer such that tips of the resistive probes face the ferroelectric layer.
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申请公布号 |
US7687838(B2) |
申请公布日期 |
2010.03.30 |
申请号 |
US20050240570 |
申请日期 |
2005.10.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HONG SEUNG-BUM;JUNG JU-HWAN;KO HYOUNG-SOO;PARK HONG-SIK;MIN DONG-KI;KIM EUN-SIK;PARK CHUL-MIN;KIM SUNG-DONG;BAECK KYOUNG-LOCK |
分类号 |
H01L21/66;G11B3/00;G11B9/00;G11B11/00;H01L21/00 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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