发明名称 |
Method for manufacturing semiconductor optical device |
摘要 |
A method for manufacturing a semiconductor optical device includes: forming a laminated semiconductor structure of GaN-based materials on a semiconductor wafer, the laminated semiconductor structure forming a laser diode of GaN-based materials, including an active layer having a quantum well structure; cleaving the semiconductor wafer including the laminated semiconductor structure to expose a cleaved end face of the laminated semiconductor structure; and forming an SiO2 film on the cleaved end face and performing a heat treatment to cause Ga vacancy diffusion in the active layer to disorder the quantum well structure of the active layer.
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申请公布号 |
US7687290(B2) |
申请公布日期 |
2010.03.30 |
申请号 |
US20080049456 |
申请日期 |
2008.03.17 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
ABE SHINJI |
分类号 |
H01L21/00;B82Y20/00;H01S5/16;H01S5/343 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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