| 摘要 |
A method allowing the elimination of crosstalk interference, through the semiconductive substrate, between portions of a circuit provided on a same substrate comprising an upper semiconductive layer and an underlying dielectric layer, for instance an SOI wafer, wherein said portions are separated one from each other by forming trenches on said substrate either down to the dielectric layer or, in the case of an SOI substrate, down to the lower semiconductive layer.
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