| 摘要 |
A transistor is formed by providing a semiconductor layer and forming a control electrode overlying the semiconductor layer. A portion of the semiconductor layer is removed lateral to the control electrode to form a first recess and a second recess on opposing sides of the control electrode. A first stressor is formed within the first recess and has a first doping profile. A second stressor is formed within the second recess and has the first doping profile. A third stressor is formed overlying the first stressor. The third stressor has a second doping profile that has a higher electrode current doping concentration than the first profile. A fourth stressor overlying the second stressor is formed and has the second doping profile. A first current electrode and a second current electrode of the transistor include at least a portion of the third stressor and the fourth stressor, respectively.
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