发明名称 |
Fabrication of a semiconductor device with stressor |
摘要 |
In a semiconductor fabrication process, an epitaxial layer is formed overlying a substrate, wherein there is a lattice mismatch between the epitaxial layer and the substrate. A hard mask having an opening is formed overlying the epitaxial layer. A recess is formed through the epitaxial layer and into the substrate. The recess is substantially aligned to the opening in the hard mask. A channel region of a semiconductor device is formed in the recess.
|
申请公布号 |
US7687354(B2) |
申请公布日期 |
2010.03.30 |
申请号 |
US20080040394 |
申请日期 |
2008.02.29 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
GRUDOWSKI PAUL A.;DHANDAPANI VEERARAGHAVAN;ZOLLNER STEFAN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|