| 摘要 |
A thin film silicon wafer having a high gettering capability and its fabricating method, and a multiplayer silicon wafer composed of such thin film silicon wafers and its fabricating method are provided. One or more gettering layers are formed right under a device layer formed near the surface of a semiconductor silicon wafer. A device is fabricated in a device layer of the semiconductor silicon wafer. Thereafter, part of the semiconductor silicon wafer from the back surface to right under the gettering layers is removed leaving at least one gettering layer, thus fabricating a thin film silicon wafer. Even though the thickness of the silicon wafer is reduced, the silicon wafer has a gettering capability. |
