| 摘要 |
<p>PURPOSE: A manufacturing method of a semiconductor device eliminates collision between a contact plug and a gate pattern or fault. The process margin is secured. CONSTITUTION: Recesses(304a, 304b) are formed in the active area and inactive region. Here, the inactive region is formed into the oxide film. The surface exposing of the inactive region is substituted for as the nitride film. The gate pattern is formed in the recess. The gate pattern comprises the gate electrode(306). The cleaning process is enforced after the substitution of the nitride film.</p> |
