| 摘要 |
<p>A memory in which thermal stability is improved without increasing the writing current. The memory is provided with a storage element (3) having a storage layer (17) for holding information by the magnetization state of a magnetic body. A magnetization fixation layer (31) is provided on the storage layer (17) through an intermediate layer (16). The intermediate layer (16) consists of an insulator. Direction of magnetization M1 of the storage layer (17) is changed by injecting electrons subjected to spin polarization in the laminating direction, and information is recorded on the storage layer (17). Strain is applied to the storage layer (17)from an insulation layer on the periphery of the storage layer (17) having a smaller coefficient of thermal expansion as compared with the storage layer (17). The memory is also provided with wiring for supplying a current in the laminating direction of the storage element (3).</p> |
