发明名称 |
PHOTOMASK BLANK, PHOTOMASK AND METHOD FOR MANUFACTURING THEREOF |
摘要 |
PURPOSE: A photo mask blank, and a photo mask and their manufacturing method are directly provided in action the transfer pattern transferred from the resist film in the etching mask film to the dry etching in substrate. The CD precision of pattern can be improved. CONSTITUTION: The phase shift part occurs the predetermined phase difference about the exposure light transmitting. The phase shift mask establishes the phase shift part in the light-transmitting substrate(1). It is formed in the peripheral region of the transfer pattern domain of the light-transmitting substrate surface and the light shielding portion(13a) shields the exposure light. It is close to the transfer pattern domain of the light-transmissive substrate surface with the phase shift film(30) and the etching mask film(20) is formed. The etching mask film is formed into the material which is materially dry-etched to the chlorine-containing gas and is not materially dry-etched to the fluoride group gas. |
申请公布号 |
KR20100033358(A) |
申请公布日期 |
2010.03.29 |
申请号 |
KR20090088409 |
申请日期 |
2009.09.18 |
申请人 |
HOYA CORPORATION |
发明人 |
HASHIMOTO MASAHIRO;MITSUI HIDEAKI |
分类号 |
H01L21/027;G03F1/32;G03F1/34;G03F1/60;G03F1/68;G03F1/80 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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