INTEGRAL PATTERNING OF LARGE FEATURES ALONG WITH ARRAY USING SPACER MASK PATTERNING PROCESS FLOW

摘要

PURPOSE: A unified patterning of the big feature following the spacer mask patterning process flow varies interval between the patterned feature and width in circuit. The patterned feature having the density increased in the top of the substrate can be formed. CONSTITUTION: The sacrificial structural layer(302) which is to the core material is formed on the substrate(300). The protective layer(304) which is to the protective material is formed on the novelty Cree structural layer. In order to form domain and patterned structures(306, 308) of the substrate exposing, the novelty Cree structural layer and protective layer are patterned. The conformal layer which is to the spacer material is formed on the structure remaining as described above and the substrate exposing. The conformal layer is etched in order to expose the domain of the substrate exposing as described above. Spacer is formed on the side of core by etching the conformal layer.